Type Here to Get Search Results !

VLSI Design and Technology MCQ with Answer [161-180].

0

 VLSI Design & Technology MCQ with Answers [161-180].

161. In BiCMOS, MOS switches are used to ........




... Answer is D)
Explanation: In BiCMOS circuits, MOS switches are used to perform logic functions. The ability to turn the power MOS “ON” and “OFF” allows the device to be used as a very efficient switch with switching speeds much faster than standard bipolar junction transistors.




162. An antifuse element initial provides ........ between two conductors in absence of the application of sufficient programming voltage.




... Answer is A)
An antifuse element initial provides insulation between two conductors in absence of the application of sufficient programming voltage.




163. Which type of CPLD packaging comprises pins on all four sides that wrap around the edges of chip?




... Answer is B)
Plastic leaded chip carrier CPLD packaging comprises pins on all four sides that wrap around the edges of chip



164. In BiCMOS, bipolar transistors are used to ..........




... Answer is D)
Explanation: In BiCMOS, bipolar transistors are used to drive output loads. Bipolar transistor can also be used as amplifier, switch or as an oscillator.



165. The nMOS and pMOS transistors used in BiCMOS is ..........




... Answer is C)
Explanation: The nMOS and pMOS transistors used in BiCMOS device operates in enhancement mode. Enhancement mode devices are mostly common switching elements in MOS.



166. Which level of routing resources are supposed to be the dedicated lines allowing output of each tile to connect directly to every input of eight surrounding tiles?




... Answer is B)
No Explanation



167. Maze routing is also known as ...........




... Answer is A)
Maze routing is also known as lee/Moore algorithm.



168. The inverter has ........




... Answer is B)
Explanation: The inverter has low output impedance and low input impedance. These are some of the properties of a BiCMOS inverter.



169. The inverter has ..........




... Answer is D)
Explanation: The inverter has high current driving capability, occupies smaller area and has high noise margins.



170. BiCMOS has ......... standby leakage current.




... Answer is C)
Explanation: BiCMOS has higher standby leakage current and thus has high power consumption.

171.In a chip, which type/s of pad design/s is/are adopted to solve the problem of pin count?




... Answer is C)
No Explanation.




172. In high noise margin (NMH), the difference in magnitude between the maximum HIGH output voltage of driving gate and the maximum HIGH voltage is recognized by the ......... gate.




... Answer is A)
Receiving




173.Which factor/s play/s a crucial role in determining the speed of CMOS logic gate?




... Answer is D)
No Explanation.



174. In spartan-3 family architecture, which programmable functional element accepts two 18 bit binary numbers as inputs and computes the product?




... Answer is D)
None of the above.



175. The MOSFETS are arranged in this configuration to provide ...........




... Answer is C)
Explanation: MOSFETs provide zero static power dissipation and high input impedance.



176. The BJTs in the BICMOS circuit is in ........... configuration.




... Answer is A)
Explanation: In BiCMOS circuit, the BJT transistors are in Totem pole configuration.



177. For improved base current discharge ......... enhancement type nMOS devices have to be added.




... Answer is B)
Explanation: For improved base current discharge, two enhancement type nMOS transistors have to be added.



178. Latch-up can be induced by ........




... Answer is B)
Explanation: Latch-up can be induced by glitches on the supply rail or by incident radiation.



179. In accordance to the scaling technology, the total delay of the logic circuit depends on .......




... Answer is D)
No Explanation.



180. How many transistors might bring up latch up effect in p-well structure?




... Answer is B)
Explanation: Two transistors and two resistances might bring up the latch-up effect in p-well structure. These are associated with p-well and with regions of the substrate.




Next Page : 1    2     3    4        6    7     8     9     10

Post a Comment

0 Comments