VLSI Design and Technology MCQ with Answer [81-100].
81. Silicon oxide is patterned on a substrate using ........
Explanation: Silicon oxide is patterned on a substrate using Photolithography.
82. The ....... is used to reduce the resistivity of poly silicon.
Explanation: The resistivity of poly silicon is reduced by Doping impurities.
83. What is Lithography?
Explanation: Lithography is the process used to develop a pattern to a layer on the chip.
84. After an initialization phase, the simulator enters the ....... phase.
After an initialization phase, the simulator enters the execution phase.
85. In composite data type of VHDL, the record type comprises the elements of ........ data types.
In composite data type of VHDL, the record type comprises the elements of different data types.
86. Which among the following wait statement execution causes the enclosing process to suspend and then wait for an event to occur on the signals?
Wait on x,y,z
87. In floorplanning, placement and routing are ........ tools.
In floorplanning, placement and routing are back end tools
88. Which among the following is/are not suitable for in-system programming?
No explanation.
89.Simple Programmable Logic Devices (SPLDs) are also regarded as ..........
No explanation.
90. In signal integrity, which noise/s occur/s due to impedance mismatch, stubs, vias and other interconnection discontinuities?
Reflection Noise
91. In DIBL, which among the following is/are regarded as the source/s of leakage?
No Explanation
92. In enhancement MOSFET, the magnitude of output current ........... due to an increase in the magnitude of gate potentials.
In enhancement MOSFET, the magnitude of output current increses due to an increase in the magnitude of gate potentials.
93. Which among the following is/are regarded as an/the active resistor/s?
No Explanation.
94. To grow the polysilicon gate layer, which of the following chemical is used for chemical vapour deposition?
Explanation: Silicon Wafer is placed in a reactor with silane gas (SiH4), and they are heated again to grow the polysilicon layer by chemical vapor deposition.
95. The process by which Aluminium is grown over the entire wafer, also filling the contact cuts is?
Explanation: Aluminum is sputtered over the entire wafer, it also fills the contact cuts.
96. Chemical Mechanical Polishing is used to ......
Explanation: The pad oxide and nitride are removed using a Chemical Mechanical Polishing (CMP) step.
97. Ids depends on ........
Explanation: Ids depends on both Vgs and Vds. The charge induced is dependent on the gate to source voltage Vgs also charge can be moved from source to drain under influence of electric field created by Vds.
98. Transit time can be given by ..........
Explanation: Transit time (Ʈ) can be given by lenght of channel(L) by velocity(v). Transit time is the time required for an electron to travel between two electrodes..
99. Ids can be given by ........
Explanation: Ids can be given as charge induced in the channel(Qc) divided by transit time (Ʈ). Ids is equivalent to (-Isd)..
100. Which concept proves to be beneficial in acquiring concurrency and order independence?
No Explanation.